PART |
Description |
Maker |
MT47H32M16HR-25E MT47H64M8CF-25EG |
DDR2 SDRAM MT47H128M4 ?32 Meg x 4 x 4 banks MT47H64M8 ?16 Meg x 8 x 4 banks MT47H32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
MT48LC16M16A2P-75DTR |
SDR SDRAM MT48LC64M4A2 ?16 Meg x 4 x 4 banks MT48LC32M8A2 ?8 Meg x 8 x 4 banks MT48LC16M16A2 ?4 Meg x 16 x 4 banks
|
Micron Technology
|
AS1322 AS1322A-BTTT AS1322-13 AS1322B-BTTT |
Low Vol tage, Micropower, DC-DC Step-Up Conver ters
|
ams AG
|
AS1329B-BTTT |
Low Vol tage, Micropower, DC-DC Step-Up Conver ters
|
ams AG
|
MT46H16M16LFBF-6ITH MT46H8M32LGB5-75ITA |
Mobile DDR SDRAM MT46H16M16LF ?4 Meg x 16 x 4 banks MT46H8M32LF/LG ?2 Meg x 32 x 4 banks 8M X 32 DDR DRAM, 6 ns, PBGA90
|
Micron Technology
|
K4S640832E-TC1H K4S640832E-TC1L K4S640832E-TC75 K4 |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL 2M x 8Bit x 4 Banks Synchronous DRAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
38721-7312 38721-7306 38721-7308 38721-7304 38721- |
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 72-5 2种方式结核病 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 72-5 8路结核病 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 72-8 12未来路结核病 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 72-8 10未来路结核病 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 72-8 6未来路结核病 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 72-8 2种方式结核病 25 A, BARRIER STRIP TERMINAL BLOCK, 1 ROW, 1 DECK
|
复位半导 Harwin PLC Ironwood Electronics MOLEX INC
|
K4S510832M K4S510832M-TC_TL1H K4S510832M-TC_TL1L K |
16M x 8Bit x 4 Banks Synchronous DRAM Data Sheet 16M x 8bit x 4 Banks Synchronous DRAM LVTTL 1,600 × 8位4银行同步DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
MC10H130FN MC10H130L MC10H130P ON0752 |
Dual In/Single Out Autoswitching Power MUX, Manual/Auto Sw, Adj. Cur Limit, Adj. Vol Threshold 8-TSSOP -40 to 85 10H SERIES, DUAL LOW LEVEL TRIGGERED D LATCH, COMPLEMENTARY OUTPUT, PDIP16 From old datasheet system Dual Latch
|
Motorola Mobility Holdings, Inc. Motorola, Inc.
|